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audio dual matched pnp transistor data sheet ssm2220 rev. c document feedback information furnished by analog devices is believed to be accurate and reliable. however, no responsibility is assu med by analog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or pa tent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. one technology way, p.o. box 9106, norwood, ma 02062 - 9106, u.s.a. tel: 781.329.4700 ? 2013 analog devices, in c. all rights reserved. technical support www.analog.com features low v oltage n oise at 100 hz, 1 nv/hz m ax imum high g ain b andwidth : 190 mhz t yp ical gain at i c = 1 ma, 165 t yp ical tight g ain m atching : 3% max imum outstanding l ogarithmic c onformance : r be = 0.3 ? t yp ical low o ffset v oltage : 200 v max imum applicati ons microphone p reamplifiers tape h ead p reamplifiers current s ources and m irrors low n oise p recision i nstrumentation voltage c ontrolled a mplifiers/ m ultipliers pin connection diagram c 1 1 b 1 2 e 1 3 nc 4 c 2 8 b 2 7 e 2 6 nc 5 ssm2220 top view (not to scale) 03096-001 notes 1. nc = no connect. this pin is not connected internally. figure 1 . general description the ssm2220 is a dual , low noise , matched pnp transistor , which has been optimized for use in audio applications. the ultralow input voltage noise of the ssm2220 is typically only 0.7 nv/hz over the entire audio bandwidth of 20 hz to 20 khz. the low noise, high bandwidth (190 mhz), and o ffset v oltage of (200 v m ax imum ) make the ssm2220 an ideal choice for demand ing , low noise preamplifier applications. the ssm2220 also offers excellent matching of the current gain (h fe ) to about 0.5% , which help s to reduce the high order ampl i - fier harmonic distortion. in addition, to e nsure the long - term stability of the matching parameters, internal protection diodes across the base to emitter junction were used to clamp any reverse base to emitter junction potential. this prevents a base to emitter breakdown condition , which can result in degradation of gain and matching performance due to excessive breakdown current. another feature of the ssm2220 is its very low bulk resistance of 0.3 ? typ ical , which assures accurate logarithmic conformance. the ssm2220 is offered in 8 - lead plastic dual in line ( pdip ) and 8 - lead standard small outline ( soic ) , and its performance and cha racteristics are guaranteed over the extended industrial temper - ature range of ?40c to +85c .
ssm2220 data sheet rev. c | page 2 of 12 table of contents features .............................................................................................. 1 appli cations ....................................................................................... 1 pin connection diagram ................................................................ 1 general description ......................................................................... 1 specifi cations ..................................................................................... 3 electrical characteristics ............................................................. 3 absolute maximum ratings ............................................................ 4 thermal resistance ...................................................................... 4 esd caution .................................................................................. 4 typical performance characteristics ..............................................5 applications information .................................................................8 super low noise amplifier ..........................................................8 low noise microphone preamplifier .........................................9 noise measurement ................................................................... 10 current sources .......................................................................... 10 outline dimensions ....................................................................... 12 ordering guide .......................................................................... 12 r evision history 4/1 3 rev. b to rev. c updated format .................................................................. universal changes to features section and figure 1 ..................................... 1 change to endnote 2 and endnote 4 , table 1 ............................... 3 change d breakd own voltage parameter, table 2 to breakdown voltage (collector to emitter), table 2 ................ 3 c hanges to table 3 ............................................................................ 4 changes to figure 8 caption , figure 9 caption , and figure 12 ..................................................................................... 6 change to figure 1 5 ......................................................................... 7 changes to super lo w noise a mplifier section , figure 16, and f igure 17 caption ............................................................................. 8 change to figure 1 8 ......................................................................... 9 changes t o figure 19 and noise measurement section ............ 10 changes to current sources and current matching section s .......................................................................... 11 updated outline dimensions ....................................................... 12 changes to ordering guide .......................................................... 12 11/03 rev. a to rev. b changes to order ing guide ............................................................. 1 updated outli ne dimensions .......................................................... 9
data sheet ssm2220 rev. c | page 3 of 12 specifications t a = 25c, unless otherwise noted. table 1. parameter symbol min typ max unit test conditions /comments current gain 1 h fe v cb = 0 v to 36 v 80 165 i c = 1 ma 70 150 i c = 100 a 60 120 i c = 10 a c urrent g ain m atching 2 h fe 0.5 6 % i c = 100 a, v cb = 0 v noise voltage density 3 e n i c = 1 ma, v cb = 0 v 0.8 2 nv/hz f o = 10 hz 0.7 1 nv/hz f o = 100 hz 0.7 1 nv/hz f o = 1 khz 0.7 1 nv/hz f o = 10 khz offset voltage 4 v os 40 200 v v cb = 0 v, i c = 100 a o ffset v oltage c hange vs. c ollector v oltage v os /v cb 11 200 v i c = 100 a, v cb1 = 0 v, v cb2 = ?36 v o ffset v oltage c hange vs. c ollector c urrent v os /i c 12 75 v v cb = 0 v, i c1 = 10 a, i c2 = 1 ma offset current i os 6 45 na i c = 100 a, v cb = 0 v collector to base leakage current i cb o 50 400 pa v cb = ?36 v = v max bulk resistance r be 0.3 0.75 ? v cb = 0 v, 10 a i c 1 ma collector saturation voltage v ce(sat) 0.026 0.1 v i c = 1 ma , i b = 100 a 1 current gain is measured at collector to base voltages (v cb ) swept from 0 v to v max at indicated collector current. typicals are measured at v cb = 0 v. 2 current gain matching ( h fe ) is defined as follows : h fe = c fe b i h i min ) )( ( 100 ? 3 sample tested. noise tested and specified as equivalent input voltage for each transistor. 4 offset voltage is defined as follows : v os = v be1 C v be2 = ? ? ? ? ? ? ? ? c2 c1 i i q kt ln where v os is th e differential voltage for i c1 = i c2 . electrical character istics ?40c t a +85c, unless otherwise noted. table 2. parameter symbol min typ max unit test conditions /comments current gain h fe v cb = 0 v to 36 v 60 125 i c = 1 ma 50 105 i c = 100 a 40 90 i c = 10 a offset voltage v os 30 265 v i c = 100 a, v cb = 0 v o ffset v oltage d rift 1 tcv os 0.3 1.0 v/c i c = 100 a, v cb = 0 v offset current i os 10 200 na i c = 100 a, v cb = 0 v breakdown voltage (collector to emitter) bv ceo 3 6 v 1 guaranteed by v os test ( tcv os = v os / t for v os << v be ) , where t = 298k for t a = 25c.
ssm2220 data sheet rev. c | page 4 of 12 absolute maximum rat ings table 3. parameter rating breakdown voltage of collector to base voltage ( b v cbo ) 36 v collector to emitter voltage ( b v c e o ) 36 v collector to collector voltage ( b v c c ) 36 v emitter to emitter voltage ( b v ee ) 36 v current collector (i c ) 20 ma emitter (i e ) 20 ma temperature range operating C 40c to +8 5c storage C65 c to +1 50c junction C 65c to +150c lead temperature (soldering, 60 s ec) + 300c stresses above those listed under absolut e maximum ratings may cause permanent damage to the device. this is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. thermal resistance table 4. package type ja 1 jc unit 8- lead p dip 103 43 c/w 8- lead so ic 158 43 c/w 1 ja is specified for worst - case mounting conditions ; that is , ja is speci fied for a device in a socket for the p dip package , and a device soldered to a printed circuit board for so ic pac kages. esd caution
data sheet ssm2220 rev. c | page 5 of 12 typical performance characteristics 0v 40nv ?40nv 1s 20mv v ce = 5v i c = 1ma t a = 25c vertical = 40nv/div horizontal = 1s/div 03096-002 figure 2 . low frequency noise 14 0 2 4 6 8 10 12 0.001 0.01 0.1 1 noise figure (db) collector current (ma) r s = 1k r s = 10k r s = 100k v ce = 5v f = 1khz 03096-003 figure 3 . noise figure vs. collector current 0.5 ?0.5 ?0.4 ?0.3 ?0.2 ?0.1 0 0.1 0.2 0.3 0.4 10 ?8 10 ?3 10 ?4 10 ?5 10 ?6 10 ?7 logging error (mv) collector current (a) t a = 25c v cb = 0v 03096-004 figure 4 . emitter to base l og conformity 250 0 50 100 150 200 1 10 100 1000 total noise (nv hz) collector current (a) t a = 25c v cb = 0v r s = 1k r s = 10k r s = 100k r s r s f = 1khz 03096-005 figure 5 . total noise vs. collector current 6 5 4 3 2 1 0 0 3 6 9 12 noise voltage density (nv hz) collector current (ma) t a = 25c v cb = 0v 10hz 100hz 03096-006 figure 6 . noise voltage density vs. collector current 1k 0.1 1 10 100 0.1 100k 10k 1k 100 10 1 noise voltage density (nv hz) frequency (hz) t a = 25c v cb = 0v i c = 10a i c = 100a i c = 1ma 03096-007 figure 7 . noise voltage density vs. frequency
ssm2220 data sheet rev. c | page 6 of 12 300 250 200 150 100 50 0 10 1000 100 current gain (h fe ) collector current (a) v cb = 0v +125c +25c ?55c 03096-008 figure 8 . current gain (h fe ) vs. collector current 700 600 500 400 300 200 100 0 ?55 ?35 ?15 5 25 45 65 85 105 125 current gain (h fe ) temperature (c) i c = 1ma v cb = ?36v v cb = 0v 03096-009 figure 9 . current gain (h fe ) vs. temperature 1k 0.1 1 10 100 0.001 100 10 1 0.1 0.01 f t ? unity-gain bandwidth product (mhz) collector current (ma) t a = 25c v cb = 0v 03096-010 figure 10 . gain bandwidth vs. collector current 10 0.01 0.1 1 0.01 10 1 0.1 saturation voltage (v) collector current (ma) +125c +25c ?55c 03096-0 1 1 figure 11 . saturation voltage vs. collector current 0.70 0.65 0.60 0.55 0.50 0.45 0.40 0.35 1 10000 1000 100 10 base to emitter voltage, v be (v) collector current (a) t a = 25c 03096-012 figure 12 . base to emitt er voltage (v be ) vs. collector current 50 40 30 20 10 0 0 ?35 ?30 ?25 ?20 ?15 ?10 ?5 capacitance (pf) collector-base voltage (v) t a = 25c 03096-013 figure 13 . collector to base capacitance vs. v cb
data sheet ssm2220 rev. c | page 7 of 12 1m 1k 10k 100k 1 1000 100 10 h ie C small-signal input resistance () collector current (a) t a = 25c 03096-014 figure 14 . small signal input resistance ( h ie ) vs. collector current 100 0.01 0.1 1 10 1 1000 100 10 output conductance, h oe (m) collector current (a) t a = 25c 03096-015 figure 15 . small signal output conductance ( h oe ) vs. collector current
ssm2220 data sheet rev. c | page 8 of 12 applications informa tion 5v a v = 10 c f = 30pf 20s pulse response a v = 1000 v ert = 1nv/div low frequency noise 10f ad8671 2 3 6 7 4 0.01f 0.01f ?15v +15v v out q5 q2 q3 q7 q4 q1 q6 + ? 83? 1.5k? 0.01% 1.5k? 0.01% 27k? ?15v red led +15v ?15v + 0.001f ssm2220 pairs: q1 ? q2 q3 ? q4 q5 ? q6 150? 0.01f + 10f 0.001f 03096-016 figure 16 . super low noise amplifi er super low noise a mplifier the circuit in figure 16 is a super low noise amplifier , with equiv - alent input voltage noise of 0.32 nv/hz. by paralleling ssm2220 matched pairs, a reduction of the base spreading resistance by a factor of 3 results in a further reduction of amplifier noise by a fac - tor of 3. additionally, the shot noise contribution is reduced by maintaining a high collector current (2 ma/device) , which reduces the dynamic emitter resistance and decreases voltage noise. the voltage noise is inversely proportional to the square root of the stage current, wherea s current noise increases proportionally. accordingly, this amplifier capitalizes on voltage noise reduction techniques at the expense of increasing the current noise. however, high current noise is not usually important when dealing with low impedance sou rces. this amplifier exhibits excellent full power ac performance, 0.08% thd into a 600 ? load, making it suitable for exacting audio applications (see figure 17 ). 0.1 0.001 0.01 10 100k 10k 1k 100 total harmonic distortion (%) frequency (hz) 600 load no load 03096-017 figure 17 . total harmonic distortion vs. frequency of circuit in figure 16
data sheet ssm2220 rev. c | page 9 of 12 ad8671 2 3 1 8 4 10f + + 0.01f 0.01f 10f +15v ?15v v out led q1 ssm2220 q2 2n29007a 18 36 27 r1 250 ? v in r2 27k ? r3 5k ? r4 5k ? r6 100 ? r5 100 ? c1 50pf thd < 0.005% 20hz to 20khz 0.5nv/ hz 1/f corner < 1hz 03096-018 figure 18. low noise microphone preamplifier low noise microphone preamplifier figure 18 shows a microphone preamplifier that consists of an ssm2220 and a low noise op amp. the input stage operates at a relatively high quiescent current of 2 ma per side, which reduces the ssm2220 transistor voltage noise. the 1/f corner is less than 1 hz. total harmonic distortion is under 0.005% for a 10 v p-p signal from 20 hz to 20 khz. the preamp gain is 100, but can be modified by varying r5 or r6 (v out /v in = r5/r6 + 1). a total input stage emitter current of 4 ma is provided by q2. the con- stant current in q2 is set by using the forward voltage of a gaasp led as a reference. the difference between this voltage and the v be of a silicon transistor is predictable and constant (to a few percent) over a wide temperature range. the voltage difference, approximately 1 v, is dropped across the 250 resistor, which produces a temperature stabilized emitter current.
ssm2220 data sheet rev. c | page 10 of 12 e n 10f + 0.1f ad8671 2 3 6 7 4 0.01f 0.01f +15v ?15v ad8671 3 2 6 7 4 0.01f 0.01f +15v ?15v 1k? 3 6 1 2 7 8 ssm2220 3 6 1 2 7 8 ssm2220 +5v 1k? 500? adjust pot for 2ma (2v across 1k ? res) ssm2220 dut 1 8 3 6 2 7 2ma 5k? 1% 5k? 1% 10? 10k? 100? 2.2pf 10f + 0.1f 5k? ?15v spot noise for each transistor = e n 10,000 2 03096-019 figure 19 . voltage noise measurement circu it noise measurement all resistive components and semiconductor junctions contribute to the system input noise. resistive components produce johnson noise (e n 2 = 4kt b r , or e n = 0.13r nv/hz, where r is in k?) . at semiconductor junctions, s h ot noise is caused by current flowing through a junction, produc ing voltage noise in series impedances such as transistor collector load resistors ( i n = 0.556i pa/hz, where i is in a). figure 19 illustrates a technique for measuring the e quivalent input noise voltage of the ssm2220 . a stage current of 1 ma is used to bias each side of the differential pair. the 5 k? collector resistors noise contribution is insignificant compared to the voltage noise of the ssm2220 . because noise in the signal path is referred back to the input, this voltage noise is attenuated by the gain of the circuit. consequently, the noise contribu tion of the collector load resistors is only 0.048 nv/hz. this is considerably less than the typical 0.8 nv/hz input noise voltage of the ssm2220 transistor. t he noise contribution of the ad8671 gain stages is also negligible , due to the gain in the signal path. the op amp stages amplify the input referred noise of the transistors , increasing the signal strength to allow the noise spectral density , input n e 10,000 , to be meas - ured with a spectrum analyzer. because equal noise contributions from each transistor in the ssm2220 are assumed, the output is divided by 2 to determine the input noise of a single transistor . air currents cause small temperature changes that can appear as low frequency noise. to eliminate this noise source, the measure - ment circuit must be thermally isolated. eff ects of extraneous noise sources must also be eliminated by totally shielding the circuit. ssm2220 ssm2220 +v r i out = i i = +v ? 2v be r q4 q3 q1 q2 03096-020 figure 20 . cascode current source current sources a fundamental requirement for accurate current mirrors and active load stages is matche d transistor components. due to the excellent v be matching (the voltage difference between one v be and another, which is required to equalize collector current) and gain matching, the ssm2220 can be used to implement a variety of standard cur - rent mirrors that can source current into a load such as an amplifier stage. the advantages of current loads in amplifiers vs. resistors are an increase of voltage gain due to higher impedances, larger signal range, and in many applications, a wider signal bandwidth. figure 20 illustrates a cascode current mirror consisting of two ssm2220 transistor pairs. the cascode current source has a common base transistor in series with the output , which causes an increase in output imped ance of the current source because v ce stays relatively constant. high fre - quency characteristics are improved due to a reduction of miller capacitance. the small signal output impedance can be determined
data sheet ssm2220 rev. c | page 11 of 12 by consulting figure 15 . typical output impedance levels approach the performance of a perfect current source. ( r o ) q3 = m 1 mho 0 . 1 1 = q 2 and q 3 are in series and operate at the same current level; therefore, the total output impedance is as follows : r o = h fe ( r o ) q3 (160)(1 m ? ) = 160 m ? current matching the objective of current source or mirror design is generation of currents that either are matched or must maintain a constant ratio. however, mismatch of base emitter voltages cause s output current errors. consider the example of figure 21. r1 r2 r1 = r2 = r a closely matched transistor pair v b ? + i c + ?, c 2 i c ? ?, c 2 03096-021 figure 21 . current matc hing circuit if the resistors and transistors are equal and the collector voltages are the same, then the collector currents match precisely. investigating the cur rent matching errors resulting from a nonzero v os , i c is defined as the current error between the two transistors . figure 22 describes the relationship of current matching errors vs . offset voltage for a specified average current , i c . note that because the rela tive error between the currents is exponentially proportional to the offset voltage, tight matching is required to design high accuracy current sources. for example, if the offset voltage were 5 mv at 100 a collector current, the current match - ing error w ould be 20%. additionally, temperature effects , such as offset drift (3 v/c per mv of v os ) , degrade performance if q1 and q2 are not well matched. 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 10 i c = 10a i c = 100a i c = 1ma 1 0.1 0.01 ?, c i c % v os (mv) ssm2220 v os performance 5 n h fe = 200 ? i = i c1 ? i c2 i c = i c1 + i c2 2 03096-022 figure 22 . current matching accuracy vs. offset voltage
ssm2220 data sheet rev. c | page 12 of 12 outline dimensions compliant t o jedec s t andards ms-001 controlling dimensions are in inches; millimeter dimensions (in p arentheses) are rounded-off inch equi v alents for reference on l y and are not appropri a te for use in design. corner leads m a y be configured as whole or half leads. 070606- a 0.022 (0.56) 0.018 (0.46) 0.014 (0.36) sea ting plane 0.015 (0.38) min 0.210 (5.33) max 0.150 (3.81) 0.130 (3.30) 0. 1 15 (2.92) 0.070 (1.78) 0.060 (1.52) 0.045 (1.14) 8 1 4 5 0.280 (7. 1 1) 0.250 (6.35) 0.240 (6.10) 0.100 (2.54) bsc 0.400 (10.16) 0.365 (9.27) 0.355 (9.02) 0.060 (1.52) max 0.430 (10.92) max 0.014 (0.36) 0.010 (0.25) 0.008 (0.20) 0.325 (8.26) 0.310 (7.87) 0.300 (7.62) 0.195 (4.95) 0.130 (3.30) 0. 1 15 (2.92) 0.015 (0.38) gauge plane 0.005 (0.13) min figure 23 . 8 - lead plastic dual in - line package [pdip] (n - 8) dimensions shown in inches and (millimeters) c o n t r o l l i n g d i m e n s i o n s a r e i n m i l l i m e t e r s ; i n c h d i m e n s i o n s ( i n p a r e n t h e s e s ) a r e r o u n d e d - o f f m i l l i m e t e r e q u i v a l e n t s f o r r e f e r e n c e o n l y a n d a r e n o t a p p r o p r i a t e f o r u s e i n d e s i g n . c o m p l i a n t t o j e d e c s t a n d a r d s m s - 0 1 2 - a a 0 1 2 4 0 7 - a 0 . 2 5 ( 0 . 0 0 9 8 ) 0 . 1 7 ( 0 . 0 0 6 7 ) 1 . 2 7 ( 0 . 0 5 0 0 ) 0 . 4 0 ( 0 . 0 1 5 7 ) 0 . 5 0 ( 0 . 0 1 9 6 ) 0 . 2 5 ( 0 . 0 0 9 9 ) 4 5 8 0 1 . 7 5 ( 0 . 0 6 8 8 ) 1 . 3 5 ( 0 . 0 5 3 2 ) s e a t i n g p l a n e 0 . 2 5 ( 0 . 0 0 9 8 ) 0 . 1 0 ( 0 . 0 0 4 0 ) 4 1 8 5 5 . 0 0 ( 0 . 1 9 6 8 ) 4 . 8 0 ( 0 . 1 8 9 0 ) 4 . 0 0 ( 0 . 1 5 7 4 ) 3 . 8 0 ( 0 . 1 4 9 7 ) 1 . 2 7 ( 0 . 0 5 0 0 ) b s c 6 . 2 0 ( 0 . 2 4 4 1 ) 5 . 8 0 ( 0 . 2 2 8 4 ) 0 . 5 1 ( 0 . 0 2 0 1 ) 0 . 3 1 ( 0 . 0 1 2 2 ) c o p l a n a r i t y 0 . 1 0 figure 24 . 8 - lead standard small outline package [soic _n ] narrow body (r - 8) dimensions sh own in millimeters and (inches) ordering guide model 1 temperature range package description package option ssm2220p z C 40c to +85c 8- lead plastic dual in - line package [pdip] n -8 SSM2220S C 40c to +85c 8- lead standard small outline package [soic _n ] r -8 SSM2220Sz C 40c to +85c 8- lead standard small outline package [soic _n ] r -8 SSM2220Sz - reel C 40c to +85c 8 - lead standard small outline package [soic _n ] r - 8 1 z = rohs compliant part. ? 2013 analog devices, inc. all rights reserved . trademarks and registered trademarks are the property of their respective owners. d03096 - 0- 4/13(c)

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